Silicon Carbide (SiC) Substrate Market Share, Sales Volume, Price Analysis Report 2026
On Dec 11, Global Info Research released "Global Silicon Carbide (SiC) Substrate Market 2026 by Manufacturers, Regions, Type and Application, Forecast to 2032". This report includes an overview of the development of the Silicon Carbide (SiC) Substrate industry chain, the market status of Silicon Carbide (SiC) Substrate Market, and key enterprises in developed and developing market, and analysed the cutting-edge technology, patent, hot applications and market trends of Silicon Carbide (SiC) Substrate.
Silicon carbide (SiC) substrates are the core foundation of third-generation semiconductor materials, grown from silicon carbide single crystals. They feature a wide bandgap (3.26 eV), high critical breakdown field strength (3 MV/cm), and high thermal conductivity (4.9 W/cm・K), making them suitable for high-temperature, high-frequency, and high-power applications. Their primary function is to serve as the physical substrate for SiC power devices (such as MOSFETs and diodes), with functional layers formed through epitaxial growth.
The boom in new energy vehicles: The widespread adoption of 800V high-voltage platforms is driving the penetration rate of silicon carbide main drive inverters from 15% in 2023 to 45% in 2026, with models such as the Xpeng G6 and Zeekr X already featuring them as standard equipment.
Photovoltaic energy storage revolution: Huawei's 200kW string inverter adopts a fully silicon carbide solution, achieving an efficiency of 99.1%, an improvement of 0.8 percentage points over silicon-based IGBTs; CATL's energy storage system incorporates silicon carbide DC/DC converters, reducing volume by 40%.
Strong Policy Support: China offers a 30% procurement subsidy for domestically produced equipment such as crystal growth furnaces and ion implanters; the U.S. CHIPS Act provides funding support for silicon carbide projects (though there is uncertainty regarding the policy beyond 2025).
Technical breakthrough directions
Size upgrade: The cost per wafer for 8-inch substrates is 35% lower than for 6-inch substrates. Companies like Wolfspeed and TianYue Advanced have achieved mass production, but the global average yield rate remains below 50%. Breakthroughs are needed in crystal growth efficiency (reducing the PVT method cycle from 100 hours to 70 hours) and microchannel density (<0.5 cm⁻²).
Material Innovation:
Liquid Phase Epitaxy (LPE): Tianyue Advanced has increased growth speed by 3 times using LPE, with yield rates approaching international standards.
Heterogeneous Integration: Coherent has developed SiC/GaN heterogeneous integration technology, achieving efficiency breakthroughs exceeding 90% in 5G base stations.
As the “foundational material” of the energy revolution, SiC substrates are transitioning from the technology validation phase to a period of scaled-up production. Despite challenges such as equipment dependency and yield bottlenecks, 8-inch mass production, material innovation, and policy support will drive rapid industry growth. Over the next five years, Chinese manufacturers are expected to leverage cost advantages and capacity expansion to gradually break the monopoly held by Western countries and become a core force in the global SiC supply chain.
This report is a detailed and comprehensive analysis for global Silicon Carbide (SiC) Substrate market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Sample Report Request Silicon Carbide (SiC) Substrate
https://www.globalinforesearch.com/reports/3382729/silicon-carbide--sic--substrate
Market segment by Type: 4 Inch、 6 Inch、 8 Inch
Market segment by Application: Power Device、 RF Devices、 Others
Major players covered: Cree (Wolfspeed)、 II-VI Advanced Materials、 ROHM、 Norstel、 SICC Materials、 Showa Denko、 TankeBlue Semiconductor、 SK Siltron、 JSG、 Semisic
Market segment by region, regional analysis covers:
North America (United States, Canada and Mexico),
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe),
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia),
South America (Brazil, Argentina, Colombia, and Rest of South America),
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa).
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Silicon Carbide (SiC) Substrate product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Silicon Carbide (SiC) Substrate, with price, sales, revenue and global market share of Silicon Carbide (SiC) Substrate from 2021 to 2025.
Chapter 3, the Silicon Carbide (SiC) Substrate competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Silicon Carbide (SiC) Substrate breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2021 to 2025.and Silicon Carbide (SiC) Substrate market forecast, by regions, type and application, with sales and revenue, from 2026 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Silicon Carbide (SiC) Substrate.
Chapter 14 and 15, to describe Silicon Carbide (SiC) Substrate sales channel, distributors, customers, research findings and conclusion.
Data Sources:
Via authorized organizations:customs statistics, industrial associations, relevant international societies, and academic publications etc.
Via trusted Internet sources.Such as industry news, publications on this industry, annual reports of public companies, Bloomberg Business, Wind Info, Hoovers, Factiva (Dow Jones & Company), Trading Economics, News Network, Statista, Federal Reserve Economic Data, BIS Statistics, ICIS, Companies House Documentsm, investor presentations, SEC filings of companies, etc.
Via interviews. Our interviewees includes manufacturers, related companies, industry experts, distributors, business (sales) staff, directors, CEO, marketing executives, executives from related industries/organizations, customers and raw material suppliers to obtain the latest information on the primary market;
Via data exchange. We have been consulting in this industry for 16 years and have collaborations with the players in this field. Thus, we get access to (part of) their unpublished data, by exchanging with them the data we have.
From our partners.We have information agencies as partners and they are located worldwide, thus we get (or purchase) the latest data from them.
Via our long-term tracking and gathering of data from this industry.We have a database that contains history data regarding the market.
About Us:
Global Info Research
Web: https://www.globalinforesearch.com
Email: report@globalinforesearch.com
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provides market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
Silicon carbide (SiC) substrates are the core foundation of third-generation semiconductor materials, grown from silicon carbide single crystals. They feature a wide bandgap (3.26 eV), high critical breakdown field strength (3 MV/cm), and high thermal conductivity (4.9 W/cm・K), making them suitable for high-temperature, high-frequency, and high-power applications. Their primary function is to serve as the physical substrate for SiC power devices (such as MOSFETs and diodes), with functional layers formed through epitaxial growth.
The boom in new energy vehicles: The widespread adoption of 800V high-voltage platforms is driving the penetration rate of silicon carbide main drive inverters from 15% in 2023 to 45% in 2026, with models such as the Xpeng G6 and Zeekr X already featuring them as standard equipment.
Photovoltaic energy storage revolution: Huawei's 200kW string inverter adopts a fully silicon carbide solution, achieving an efficiency of 99.1%, an improvement of 0.8 percentage points over silicon-based IGBTs; CATL's energy storage system incorporates silicon carbide DC/DC converters, reducing volume by 40%.
Strong Policy Support: China offers a 30% procurement subsidy for domestically produced equipment such as crystal growth furnaces and ion implanters; the U.S. CHIPS Act provides funding support for silicon carbide projects (though there is uncertainty regarding the policy beyond 2025).
Technical breakthrough directions
Size upgrade: The cost per wafer for 8-inch substrates is 35% lower than for 6-inch substrates. Companies like Wolfspeed and TianYue Advanced have achieved mass production, but the global average yield rate remains below 50%. Breakthroughs are needed in crystal growth efficiency (reducing the PVT method cycle from 100 hours to 70 hours) and microchannel density (<0.5 cm⁻²).
Material Innovation:
Liquid Phase Epitaxy (LPE): Tianyue Advanced has increased growth speed by 3 times using LPE, with yield rates approaching international standards.
Heterogeneous Integration: Coherent has developed SiC/GaN heterogeneous integration technology, achieving efficiency breakthroughs exceeding 90% in 5G base stations.
As the “foundational material” of the energy revolution, SiC substrates are transitioning from the technology validation phase to a period of scaled-up production. Despite challenges such as equipment dependency and yield bottlenecks, 8-inch mass production, material innovation, and policy support will drive rapid industry growth. Over the next five years, Chinese manufacturers are expected to leverage cost advantages and capacity expansion to gradually break the monopoly held by Western countries and become a core force in the global SiC supply chain.
This report is a detailed and comprehensive analysis for global Silicon Carbide (SiC) Substrate market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Sample Report Request Silicon Carbide (SiC) Substrate
https://www.globalinforesearch.com/reports/3382729/silicon-carbide--sic--substrate
Market segment by Type: 4 Inch、 6 Inch、 8 Inch
Market segment by Application: Power Device、 RF Devices、 Others
Major players covered: Cree (Wolfspeed)、 II-VI Advanced Materials、 ROHM、 Norstel、 SICC Materials、 Showa Denko、 TankeBlue Semiconductor、 SK Siltron、 JSG、 Semisic
Market segment by region, regional analysis covers:
North America (United States, Canada and Mexico),
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe),
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia),
South America (Brazil, Argentina, Colombia, and Rest of South America),
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa).
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Silicon Carbide (SiC) Substrate product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Silicon Carbide (SiC) Substrate, with price, sales, revenue and global market share of Silicon Carbide (SiC) Substrate from 2021 to 2025.
Chapter 3, the Silicon Carbide (SiC) Substrate competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Silicon Carbide (SiC) Substrate breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2021 to 2025.and Silicon Carbide (SiC) Substrate market forecast, by regions, type and application, with sales and revenue, from 2026 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Silicon Carbide (SiC) Substrate.
Chapter 14 and 15, to describe Silicon Carbide (SiC) Substrate sales channel, distributors, customers, research findings and conclusion.
Data Sources:
Via authorized organizations:customs statistics, industrial associations, relevant international societies, and academic publications etc.
Via trusted Internet sources.Such as industry news, publications on this industry, annual reports of public companies, Bloomberg Business, Wind Info, Hoovers, Factiva (Dow Jones & Company), Trading Economics, News Network, Statista, Federal Reserve Economic Data, BIS Statistics, ICIS, Companies House Documentsm, investor presentations, SEC filings of companies, etc.
Via interviews. Our interviewees includes manufacturers, related companies, industry experts, distributors, business (sales) staff, directors, CEO, marketing executives, executives from related industries/organizations, customers and raw material suppliers to obtain the latest information on the primary market;
Via data exchange. We have been consulting in this industry for 16 years and have collaborations with the players in this field. Thus, we get access to (part of) their unpublished data, by exchanging with them the data we have.
From our partners.We have information agencies as partners and they are located worldwide, thus we get (or purchase) the latest data from them.
Via our long-term tracking and gathering of data from this industry.We have a database that contains history data regarding the market.
About Us:
Global Info Research
Web: https://www.globalinforesearch.com
Email: report@globalinforesearch.com
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provides market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
